phase control thyristor H85TBXX symbol characteristics conditions t j ( 0 c) value unit blocking parameters v rrm repetitive peak reverse voltage 125 200-1600 v v drm repetitive peak off-stage voltage 125 200-1600 v i rrm repetitive peak reverse current v = v rrm 125 30 ma i drm repetitive peak off-state current v = v rrm 125 30 ma conducting parameters i f(av) average on-state current 180 sine, 50h z , t c = 85 0 c 85 a i rms rms on-state current 135 a i tsm surge on-state current 1650 a i 2 t i 2 t sine wave, 10ms without reverse voltage 125 13.60 ka 2 s v t peak on-state voltage drop on-state current = 265a 125 1.75 v v 0 threshold voltage 125 1.20 v r 0 on-state slope resistance 125 2.60 m triggering parameters i gt gate trigger current v d = 5v 25 150 ma v gt gate trigger voltage 25 2.00 v i l latching current v d = 5v 25 600 ma p g ?peak maximum peak gate power pulse width 100 sec 100 w di/dt repetitive rate of rise of current 120 a/ sec v fgm maximum forward gate voltage 12 v i fgm maximum forward gate current 20 a thermal & mechanical parameters r th (j-c) thermal impedance, 180 conduction, sine junction to case 0.27 0 c/w r th (c-hk) thermal impedance case to heatsink 0.08 0 c/w t j maximum permissible junction temperature 125 0 c t stg storage temperature range -40 - 125 0 c f mounting torque 14 nm w weight 120 gms h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 1 of 6
phase control thyristor H85TBXX all dimensions in mm h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 2 of 6
phase control thyristor H85TBXX on state power loss 0 20 40 60 80 100 120 140 160 180 200 220 240 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 it ( av ) p t(av) - w 60 0 120 180 0 dc maximum permissible case temp 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 it( av ) a t case ( 0 c) 60 0 120 0 180 0 dc h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 3 of 6
phase control thyristor H85TBXX max non repetitive surge current 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.01 0.1 1 10 time in sec i tsm (a) transient thermal impedance junction to case 0 0.05 0.1 0.15 0.2 0.25 0.3 0.001 0.01 0.1 1 10 time in sec r th(j-c) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 4 of 6
phase control thyristor H85TBXX on state characteristics 0 50 100 150 200 250 300 350 400 00.511.522.53 v t (v) i t(av ) a gate trigger characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i g (av) v g(v) v g t i gt 25 0 c i gd 100 w (0.1ms) p o(tp) h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 5 of 6
phase control thyristor H85TBXX ordering information: - h 85 tb xx hirect make thyristor i f(av) = 85a tb ? with a pigtail v rrm = xx * 100 e.g.12 * 100 =1200v hind rectifiers ltd reserves the right to change the specifications without notice. this datasheet specifies technical information for semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. hind rectifiers ltd lake road bhandup (west) mumbai ? 400 078 tel: - +91 22 2596 8027/28/29/31 fax: - +91 22 2596 4114 e-mail: - marketing@hirect.com website: - www.hirect.com june-2008 h h i i n n d d r r e e c c t t i i f f i i e e r r s s l l t t d d 6 of 6
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